IMPROVED TECHNIQUES FOR GROWTH OF LARGE-AREA SINGLE-CRYSTAL SI SHEETS OVER SIO2 USING LATERAL EPITAXY BY SEEDED SOLIDIFICATION

被引：49

作者：

TSAUR, BY

FAN, JCC

GEIS, MW

SILVERSMITH, DJ

MOUNTAIN, RW

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 07期

关键词：

D O I：

10.1063/1.92794

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：561 / 563

页数：3

共 10 条

[1]

CARR WN, 1972, MOS LSI DESIGN APPLI, pCH2

[2]

Fan J. C. C., 1980, International Electron Devices Meeting. Technical Digest

[3] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J].

FAN, JCC ;

GEIS, MW ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :365-367

[4] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J].

GEIS, MW ;

FLANDERS, DC ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :71-74

[5]

LAM HW, 1980, EL SOC EXT ABSTR, V80, P1198

[6]

MABY EW, UNPUBLISHED

[7] SEEDED AND LIMITED SEEDING REGROWTH OF SI OVER SIO2 BY CW LASER ANNEALING [J].

MAGEE, TJ ;

PALKUTI, LJ ;

ORMOND, R ;

LEUNG, C ;

GRAHAM, S .

APPLIED PHYSICS LETTERS, 1981, 38 (04) :248-250

[8] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].

SUN, SC ;

PLUMMER, JD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) :562-573

[9]

TAMURA M, 1980, JPN J APPL PHYS, V19, P123

[10] HETEROEPITAXY OF VACUUM-EVAPORATED GE FILMS ON SINGLE-CRYSTAL SI [J].

TSAUR, BY ;

GEIS, MW ;

FAN, JCC ;

GALE, RP .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :779-781

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