COLLISION BROADENING OF OPTICAL GAIN IN SEMICONDUCTOR-LASERS

被引：6

作者：

AHN, D ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 12期

关键词：

D O I：

10.1063/1.343247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4517 / 4520

页数：4

共 18 条

[1] A FIELD-EFFECT QUANTUM-WELL LASER WITH LATERAL CURRENT INJECTION
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[2] ELECTRIC-FIELD DEPENDENCE OF INTRASUBBAND POLAR-OPTICAL-PHONON SCATTERING IN A QUANTUM WELL
AHN, D
CHUANG, SL
[J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2529 - 2535
[3] AHN D, 1987, IEEE J QUANTUM ELECT, V23, P2196
[4] VALENCE-BAND MIXING EFFECTS ON THE GAIN AND THE REFRACTIVE-INDEX CHANGE OF QUANTUM-WELL LASERS
AHN, D
CHUANG, SL
CHANG, YC
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) : 4056 - 4064
[5] DENSITY-MATRIX THEORY OF SEMICONDUCTOR-LASERS WITH RELAXATION BROADENING MODEL - GAIN AND GAIN-SUPPRESSION IN SEMICONDUCTOR-LASERS
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SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (05) : 434 - 442
[6] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643
[7] CALCULATED ABSORPTION, EMISSION, AND GAIN IN IN0.72GA0.28AS0.6P0.4
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6095 - 6100
[8] SPECTRAL DEPENDENCE OF THE CHANGE IN REFRACTIVE-INDEX DUE TO CARRIER INJECTION IN GAAS-LASERS
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LOGAN, RA
BERTNESS, KA
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4457 - 4461
[9] MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS
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MERRITT, FR
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3042 - 3050
[10] BAND STRUCTURE OF INDIUM ANTIMONIDE
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261

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