A FIELD-EFFECT QUANTUM-WELL LASER WITH LATERAL CURRENT INJECTION

被引：17

作者：

AHN, D

CHUANG, SL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 01期

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D O I：

10.1063/1.341214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：440 / 442

页数：3

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共 16 条

[1] VARIATIONAL CALCULATIONS OF SUBBANDS IN A QUANTUM-WELL WITH UNIFORM ELECTRIC-FIELD - GRAM-SCHMIDT ORTHOGONALIZATION APPROACH
AHN, D
CHUANG, SL
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1450 - 1452
[2] AHN D, 1987, IEEE J QUANTUM ELECT, V23, P2196
[3] AHN DJ, UNPUB
[4] ACTIVE Q-SWITCHING IN A GAAS/ALGAAS MULTIQUANTUM WELL LASER WITH AN INTRACAVITY MONOLITHIC LOSS MODULATOR
ARAKAWA, Y
LARSSON, A
PASLASKI, J
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (09) : 561 - 563
[5] GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS
ASADA, M
KAMEYAMA, A
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) : 745 - 753
[6] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES
CHIN, R
HOLONYAK, N
VOJAK, BA
HESS, K
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 19 - 21
[7] QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186
[8] DYNAMIC BEHAVIOR OF A GAAS-ALGAAS MQW LASER DIODE
IWAMURA, H
SAKU, T
ISHIBASHI, T
OTSUKA, K
HORIKOSHI, Y
[J]. ELECTRONICS LETTERS, 1983, 19 (05) : 180 - 181
[9] BAND STRUCTURE OF INDIUM ANTIMONIDE
KANE, EO
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261
[10] MAKIUCHI M, 1987, UNPUB C LASERS ELECT