A CV TECHNIQUE FOR MEASURING THIN SOI FILM THICKNESS

被引：54

作者：

CHEN, J

SOLOMON, R

CHAN, TY

KO, PK

HU, CM

机构：

[1] INTEL CORP,SANTA CLARA,CA 94050

[2] CYPRESS SEMICOND INC,SAN JOSE,CA 95134

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 08期

关键词：

D O I：

10.1109/55.119163

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technique is developed to measure silicon-on-insulator (SOI) silicon device film thickness using a MOSFET. The method is based on CV measurements between gate and source/drain at two different back-gate voltages. This method is simple, nondestructive, and no special test structure is needed. Using this technique, SOI film thickness mapping was made on a finished wafer and a thickness variation of +/- 150 angstrom was found.

引用

页码：453 / 455

页数：3