AN ELECTRICAL METHOD TO MEASURE SOI FILM THICKNESSES

[1] BARTH P, 1980, SEL80JBA1 STANF U EL

[2] THE MISIM-FET IN THIN SEMICONDUCTOR LAYERS - DEPLETION-APPROXIMATION MODEL OF IV CHARACTERISTICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1717 - 1726

[3] BURNHAM ME, 1985, ADV APPLICATIONS ION, V530

[4] JASTRZEBSKI L, 1983, RCA REV, V44, P250

[5] LAI P, 1984, IEEE ELECTRON DEV LE, V6, P459

[6] Lam H. W., 1982, VLSI ELECT MICROSTRU, V4, P1

[7] LIM HK, 1984, IEEE T ELECTRON DEV, V31, P401

[8] LIM HK, 1985, IEEE T ELECTRON DEV, V32, P446

[9] LIM HK, 1984, IEEE T ELECTRON DEV, V31, P1251

[10] A TWO-DIMENSIONAL ANALYSIS FOR MOSFETS FABRICATED ON BURIED SIO2 LAYER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2043 - 2050

[1] BARTH P, 1980, SEL80JBA1 STANF U EL

[2] THE MISIM-FET IN THIN SEMICONDUCTOR LAYERS - DEPLETION-APPROXIMATION MODEL OF IV CHARACTERISTICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1717 - 1726

[3] BURNHAM ME, 1985, ADV APPLICATIONS ION, V530

[4] JASTRZEBSKI L, 1983, RCA REV, V44, P250

[5] LAI P, 1984, IEEE ELECTRON DEV LE, V6, P459

[6] Lam H. W., 1982, VLSI ELECT MICROSTRU, V4, P1

[7] LIM HK, 1984, IEEE T ELECTRON DEV, V31, P401

[8] LIM HK, 1985, IEEE T ELECTRON DEV, V32, P446

[9] LIM HK, 1984, IEEE T ELECTRON DEV, V31, P1251

[10] A TWO-DIMENSIONAL ANALYSIS FOR MOSFETS FABRICATED ON BURIED SIO2 LAYER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2043 - 2050