A TWO-DIMENSIONAL ANALYSIS FOR MOSFETS FABRICATED ON BURIED SIO2 LAYER

被引：27

作者：

SANO, E

KASAI, R

OHWADA, K

ARIYOSHI, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 11期

关键词：

D O I：

10.1109/T-ED.1980.20147

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2043 / 2050

页数：8

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