SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS

被引：830

作者：

GUMMEL, HK

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1964.15364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：455 / &

共 24 条

[1] DESIGN THEORY OF JUNCTION TRANSISTORS
EARLY, JM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1953, 32 (06): : 1271 - 1312
[2] EFFECTS OF SPACE-CHARGE LAYER WIDENING IN JUNCTION TRANSISTORS
EARLY, JM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1401 - 1406
[3] P-N-I-P AND N-P-I-N JUNCTION TRANSISTOR TRIODES
EARLY, JM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1954, 33 (03): : 517 - 533
[4] EARLY JM, 1959, IRE T ELECTRON DEV, VED6, P322
[5] LARGE-SIGNAL BEHAVIOR OF JUNCTION TRANSISTORS
EBERS, JJ
MOLL, JL
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12): : 1761 - 1772
[6] GUMMEL HK, 1961, P IRE, V49, P834
[7] ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
[J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387
[8] Hamming RW, 1962, NUMERICAL METHODS SC
[9] Henrici P, 1962, DISCRETE VARIABLE ME
[10] KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164