CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON

被引：443

作者：

IZUMI, K

DOKEN, M

ARIYOSHI, H

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 18期

关键词：

D O I：

10.1049/el:19780397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：593 / 594

页数：2

相关论文

共 6 条

[1] STUDY OF SILICON-OXIDES PREPARED BY OXYGEN IMPLANTATION INTO SILICON
BADAWI, MH
ANAND, KV
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (14) : 1931 - 1942
[2] DEARNALEY G, 1973, ION IMPLANTATION, P766
[3] THIN SIO2-FILMS FORMED BY OXYGEN ION-IMPLANTATION IN SILICON - ELECTRON-MICROSCOPE INVESTIGATIONS OF SI-SIO2 INTERFACE STRUCTURES AND THEIR C-V CHARACTERISTICS
DYLEWSKI, J
JOSHI, MC
[J]. THIN SOLID FILMS, 1976, 37 (02) : 241 - 248
[4] DIELECTRIC-BREAKDOWN PROPERTIES AND IV CHARACTERISTICS OF THIN SIO2-FILMS FORMED BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON
DYLEWSKI, J
JOSHI, MC
[J]. THIN SOLID FILMS, 1977, 42 (02) : 227 - 235
[5] GUSEV VM, 1971, RADIO ENG ELECTRON P, V16, P1357
[6] FORMATION OF SIO2 FILMS BY OXYGEN-ION BOMBARDMENT
WATANABE, M
TOOI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (08) : 737 - &