DIELECTRIC-BREAKDOWN PROPERTIES AND IV CHARACTERISTICS OF THIN SIO2-FILMS FORMED BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON

被引：19

作者：

DYLEWSKI, J ^{[1
]}

JOSHI, MC ^{[1
]}

机构：

[1] UNIV BOMBAY, DEPT PHYS, BOMBAY 400019, INDIA

来源：

关键词：

D O I：

10.1016/0040-6090(77)90421-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：227 / 235

页数：9

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[4]

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CHOU, NJ ;

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[6] DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES [J].

DISTEFANO, TH .

[7]

DROBEK J, 1971, J ELECTROCHEM SOC, V118, P325

DYLEWSKI, J ;

JOSHI, MC .

DYLEWSKI, J ;

JOSHI, MC .

[10]

FREEMAN JH, 1970, 1970 EUR C ION IMPL, P74