THIN SIO2-FILMS FORMED BY OXYGEN ION-IMPLANTATION IN SILICON - ELECTRON-MICROSCOPE INVESTIGATIONS OF SI-SIO2 INTERFACE STRUCTURES AND THEIR C-V CHARACTERISTICS

被引：24

作者：

DYLEWSKI, J ^{[1
]}

JOSHI, MC ^{[1
]}

机构：

[1] UNIV BOMBAY,DEPT PHYS,BOMBAY 400019,INDIA

来源：

关键词：

D O I：

10.1016/0040-6090(76)90190-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：241 / 248

页数：8

共 14 条

[1]

ASTAKHOV VP, 1971, SOV PHYS SEMICOND+, V4, P1826

[2]

BLAMIRES NG, 1967, INT C APPLICATIONS I, P678

DYLEWSKI, J ;

JOSHI, MC .

[4]

DYLEWSKI J, TO BE PUBLISHED

[5]

Freeman J. H., 1970, European conference on ion implantation, P74

[6]

GLAZOV VM, 1968, PHYSICOCHEMICAL PRIN, P156

[7] SILICON-SILICON DIOXIDE SYSTEM [J].

GRAY, PV .

[8] THIN-FILM SILICON-ON-SAPPHIRE DEEP DEPLETION MOS TRANSISTORS [J].

HEIMAN, FP .

[9] STABILIZATION OF MOS DEVICES [J].

HOFSTEIN, SR .

[10]

MAYER JW, 1970, ION IMPLANTATION SEM, P98