STUDY OF SILICON-OXIDES PREPARED BY OXYGEN IMPLANTATION INTO SILICON

被引：41

作者：

BADAWI, MH ^{[1
]}

ANAND, KV ^{[1
]}

机构：

[1] UNIV KENT,DEPT ELECTR,CANTERBURY CT2 7NJ,KENT,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1977年 / 10卷 / 14期

关键词：

D O I：

10.1088/0022-3727/10/14/009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1931 / 1942

页数：12

共 25 条

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ANAND, KV .

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[3]

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[4] ISOLATING SURFACE LAYERS ON METALLIC CONDUCTORS PRODUCED BY ION BOMBARDMENT [J].

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OTTO, G ;

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SCHENK, M ;

WAGNER, H .

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[5]

DEARNALEY G., 1973, ION IMPLANTATION

[6] THIN SIO2-FILMS FORMED BY OXYGEN ION-IMPLANTATION IN SILICON - ELECTRON-MICROSCOPE INVESTIGATIONS OF SI-SIO2 INTERFACE STRUCTURES AND THEIR C-V CHARACTERISTICS [J].

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JOSHI, MC .

THIN SOLID FILMS, 1976, 37 (02) :241-248

[7]

DYLEWSKI J, 1976, THIN SOLID FILMS, V35, P207

[8]

ELDHAHER AHG, 1974, THESIS U KENT

[9]

Freeman J. H., 1970, European conference on ion implantation, P74

[10]

GHANDHI SK, 1968, THEORY PRACTICE MICR, P151

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