ISOLATING SURFACE LAYERS ON METALLIC CONDUCTORS PRODUCED BY ION BOMBARDMENT

被引:8
作者
BALARIN, M
OTTO, G
STORBECK, I
SCHENK, M
WAGNER, H
机构
关键词
D O I
10.1016/0040-6090(69)90071-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Isolating surface layers were formed on different metals and on silicon by means of bombardment with ionized oxygen and air, respectively. The production of these layers is described, and the electrical properties are reported. Furthermore the advantages of this procedure are discussed, and possibilities for the application of this effect are shown, particularly for the production of microelectronic devices. © 1969.
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页码:255 / &
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共 12 条
[1]   INFRARED SPECTROSCOPY OF SURFACE COATINGS IN REFLECTED LIGHT [J].
DANNENBERG, H ;
FORBES, JW ;
JONES, AC .
ANALYTICAL CHEMISTRY, 1960, 32 (03) :365-370
[2]   THICKNESS MEASUREMENTS OF SILICON DIOXIDE FILMS ON SILICON BY INFRARED ABSORPTION TECHNIQUES [J].
DIAL, JE ;
GONG, RE ;
FORDEMWALT, JN .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :326-+
[3]  
HILBERT F, 1962, NEUE HUTTE, V6, P368
[4]  
HILBERT F, 1963, JENAER RUNDSCHAU, V5, P218
[5]   INFRARED PROPERTIES OF SILICON MONOX AND EVAPORATED SIO FILMS [J].
HOWARTH, LE ;
SPITZER, WG .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1961, 44 (01) :26-28
[6]  
LAMPERT MA, 1962, AUG P IRE, P1781
[7]  
MEYER M, 1969, CR ACAD SCI B PHYS, V268, P1145
[8]  
STORBECK I, TO BE PUBLISHED
[9]  
SWANSON O, 1953, 539 NAT BUR STAND CI, V2, P23
[10]   FORMATION OF SIO2 FILMS BY OXYGEN-ION BOMBARDMENT [J].
WATANABE, M ;
TOOI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (08) :737-&