THICKNESS MEASUREMENTS OF SILICON DIOXIDE FILMS ON SILICON BY INFRARED ABSORPTION TECHNIQUES

被引：28

作者：

DIAL, JE

GONG, RE

FORDEMWALT, JN

机构：

[1] Microelectronics Division, Philco-Ford Corporation, Santa Clara, California

来源：

关键词：

D O I：

10.1149/1.2411162

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：326 / +

页数：1

共 7 条

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[3] NONDESTRUCTIVE DETERMINATION OF THICKNESS AND PERFECTION OF SILICA FILMS
MURRAY, LA
GOLDSMITH, N
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1297 - +
[4] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS
PLISKIN, WA
LEHMAN, HS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1013 - &
[5] Tolansky S., 1948, MULTIPLE BEAM INTERF
[6] VALLETTA RM, 1966, ELECTROCHEM TECHNOL, V4, P402
[7] PROPERTIES OF EVAPORATED THIN FILMS OF SIO
YORK, DB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (04) : 271 - 275