STRUCTURAL EVALUATION OF SILICON OXIDE FILMS

被引：419

作者：

PLISKIN, WA

LEHMAN, HS

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1965年 / 112卷 / 10期

关键词：

D O I：

10.1149/1.2423333

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1013 / &

共 16 条

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[4]

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[6] REFRACTIVE INDEX OF SIO2 FILMS GROWN ON SILICON [J].

PLISKIN, WA ;

ESCH, RP .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) :2011-&

[7] NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS [J].

PLISKIN, WA ;

CONRAD, EE .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) :43-&

[8] EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J].

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GNALL, RP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :872-873

[9]

PLISKIN WA, UNPUBLISHED RESULTS

[10]

PLISKIN WA, TO BE PUBLISHED

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