DEGRADATION OF PLANAR JUNCTIONS DURING REOXIDATION

被引:9
作者
BARSON, F
ARMSTRONG, WJ
MUTTER, WE
机构
关键词
D O I
10.1149/1.2425974
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1263 / 1266
页数:4
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共 13 条
[1]  
ARMSTRONG WJ, 1962, THESIS RENSELLAER PO
[2]   IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J].
ATALLA, MM ;
TANNENBAUM, E .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04) :933-946
[3]   PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1956, 102 (02) :369-376
[4]   EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J].
CHYNOWETH, AG ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1103-1110
[5]   COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].
DASH, WC .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1193-1195
[6]   METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].
GOETZBERGER, A ;
SHOCKLEY, W .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1821-1824
[7]   GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES [J].
ING, SW ;
MORRISON, RE ;
ALT, LL ;
ALDRICH, RW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :533-537
[8]  
JAMES BD, 1960, MAY CHIC M EL SOC
[9]   THE DIFFUSION OF PHOSPHORUS IN SILICON [J].
MACKINTOSH, IM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (05) :392-401
[10]  
MAEKAWA S, 1962, J PHYS SOC JAPAN, V17, P1952