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NONDESTRUCTIVE METHOD FOR MEASUREMENT OF C-V CHARACTERISTICS OF MOS CAPACITORS USING A GOLD BALL PROBE

被引：2
作者：
BADAWI, MH [1 ]
ANAND, KV [1 ]
机构：
[1] UNIV KENT, ELECTR LABS, CANTERBURY CT2 7NJ, KENT, ENGLAND
来源：
THIN SOLID FILMS | 1976年 / 37卷 / 02期
关键词：
D O I：
10.1016/0040-6090(76)90177-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：149 / 156
页数：8
相关论文
共 8 条
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BADAWI MH, 1975, THESIS U KENT
[2]  
GOETZBER.A, 1966, AT&T TECH J, V45, P1097
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APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&
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[5]  
GROVE AS, 1967, PHYS TECHNOL S, pCH9
[6]   A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].
KUHN, M .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+
[7]   SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].
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GOETZBER.A .
BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+
[8]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9
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