PREPARATION OF PBTIO3 FILMS UTILIZING SELF-CONTROL MECHANISM OF STOICHIOMETRIC COMPOSITION IN DUAL-BEAM VACUUM EVAPORATION METHOD

被引：15

作者：

UENO, S

ISHIWARA, H

机构：

[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 9B期

关键词：

VACUUM EVAPORATION METHOD; PBTIO3; FILM; SELF-CONTROL MECHANISM; EPITAXIAL GROWTH; SI;

D O I：

10.1143/JJAP.31.2982

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optimum conditions for preparing PbTiO3 films on Si and SrTiO3 substrates are investigated in the dual-beam vacuum evaporation method using PbO and TiO2. It has been found that tetragonal PbTiO3 films are formed on Si substrates at temperatures ranging from 550-degrees-C to 600-degrees-C, and that the stoichiometric composition of the films is easily obtained at 600-degrees-C by supplying excess PbO molecules to the substrate. It has also been found that PbTiO3 films grow epitaxially on SrTiO3 substrates at temperatures around 550-degrees-C.

引用

页码：2982 / 2984

页数：3

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