TEMPERATURE BEHAVIOR OF IMPLANTED AND PULSED-LASER IRRADIATED GAAS

被引：10

作者：

ZOLLO, G

PALUMBO, L

ROSSI, M

VITALI, G

机构：

[1] Dipartimento di Energetica, Università degli Studi di Roma 'La Sapienza', Roma, I-00161

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1993年 / 56卷 / 05期

关键词：

D O I：

10.1007/BF00332572

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent studies have shown that the Low-Power Pulsed-Laser Annealing (LPPLA) of ion-implanted GaAs specimens can be realized in a power-density window in which a complete structural reordering is guaranted. As the experimentally employed conditions allow us to describe the theoretical problem in an unidimensional space domain, we describe here a method to investigate the in-depth temperature behavior during the low-power pulsed-laser irradiation of ion-implanted semiconductors. The application of this method to GaAs specimens shows that the upper limit of the energy density window is connected with the exceeding of the critical temperature T(c) below which the As evaporation rate is negligible.

引用

页码：409 / 411

页数：3

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