NEAR-SURFACE PROFILING OF SEMICONDUCTOR-MATERIALS USING NEUTRON DEPTH PROFILING

被引：13

作者：

DOWNING, RG ^{[1
]}

LAMAZE, GP ^{[1
]}

机构：

[1] NATL INST STAND & TECHNOL,TECHNOL ADM,GAITHERSBURG,MD

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 11期

关键词：

D O I：

10.1088/0268-1242/10/11/001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Neutron depth profiling (NDP) is a non-destructive analytical technique for the quantitative determination of a few nuclides of particular importance to the semiconductor industry. The first few micrometres of a material can be probed irrespective of the matrix and chemical composition, including across interfacial structures. Recently, it has been used to certify a boron implant in silicon standard reference materials for calibration of secondary ion mass spectrometry (SIMS) instruments. Detection limits and examples of its use for the analysis of boron-doped silicon wafers and diamond films are provided.

引用

页码：1423 / 1431

页数：9

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