NEAR-SURFACE PROFILING OF SEMICONDUCTOR-MATERIALS USING NEUTRON DEPTH PROFILING

被引：13

作者：

DOWNING, RG ^{[1
]}

LAMAZE, GP ^{[1
]}

机构：

[1] NATL INST STAND & TECHNOL,TECHNOL ADM,GAITHERSBURG,MD

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 11期

关键词：

D O I：

10.1088/0268-1242/10/11/001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Neutron depth profiling (NDP) is a non-destructive analytical technique for the quantitative determination of a few nuclides of particular importance to the semiconductor industry. The first few micrometres of a material can be probed irrespective of the matrix and chemical composition, including across interfacial structures. Recently, it has been used to certify a boron implant in silicon standard reference materials for calibration of secondary ion mass spectrometry (SIMS) instruments. Detection limits and examples of its use for the analysis of boron-doped silicon wafers and diamond films are provided.

引用

页码：1423 / 1431

页数：9

共 30 条

[11]

EHRSTEIN JR, 1984, ASTM STP, V850, P409

[12] STUDIES ON THE LATTICE POSITION OF BORON IN SILICON [J].

FINK, D ;

BIERSACK, JP ;

CARSTANJEN, HD ;

JAHNEL, F ;

MULLER, K ;

RYSSEL, H ;

OSEI, A .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 77 (1-2) :11-33

[13] CHARACTERIZATION OF CONDUCTING DIAMOND FILMS [J].

FUJIMORI, N ;

IMAI, T ;

DOI, A .

VACUUM, 1986, 36 (1-3) :99-102

[14]

FUKUDA THA, 1989, APPL PHYS LETT, V54, P626

[15] THE EFFECT OF SURFACE-TREATMENT ON THE ELECTRICAL-PROPERTIES OF METAL CONTACTS TO BORON-DOPED HOMOEPITAXIAL DIAMOND FILM [J].

GROT, SA ;

GILDENBLAT, GS ;

HATFIELD, CW ;

WRONSKI, CR ;

BADZIAN, AR ;

BADZIAN, T ;

MESSIER, R .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) :100-102

[16] EFFECT OF STOICHIOMETRY ON THE PHASES PRESENT IN BORON-NITRIDE THIN-FILMS [J].

HACKENBERGER, LB ;

PILIONE, LJ ;

MESSIER, R ;

LAMAZE, GP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04) :1569-1575

[17] NEUTRON DEPTH PROFILING BY LARGE-ANGLE COINCIDENCE SPECTROMETRY [J].

HAVRANEK, V ;

HNATOWICZ, V ;

KVITEK, J ;

VACIK, J ;

HOFFMANN, J ;

FINK, D .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 73 (04) :523-530

[18]

HOFSASS HC, 1994, MATER RES SOC SYMP P, V316, P881

[19]

IYER SS, 1988, APPL PHYS LETT, V52, P1854

[20] A SOLUTION TO BORON CONTAMINATION AT THE SUBSTRATE EPILAYER INTERFACE OF SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

KUBIAK, RAA ;

LEONG, WY ;

DOWSETT, MG ;

MCPHAIL, DS ;

HOUGHTON, R ;

PARKER, EHC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :1905-1907

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