A SOLUTION TO BORON CONTAMINATION AT THE SUBSTRATE EPILAYER INTERFACE OF SILICON GROWN BY MOLECULAR-BEAM EPITAXY

被引：30

作者：

KUBIAK, RAA ^{[1
]}

LEONG, WY ^{[1
]}

DOWSETT, MG ^{[1
]}

MCPHAIL, DS ^{[1
]}

HOUGHTON, R ^{[1
]}

PARKER, EHC ^{[1
]}

机构：

[1] CITY LONDON POLYTECH,SIR JOHN CASS FAC PHYS SCI & TECH,SOLID STATE MBE RES GRP,LONDON EC3N 2EY,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.573745

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1905 / 1907

页数：3

共 8 条

[1] Allen F. G., 1960, J APPL PHYS, V30, P979
[2] HARDEMAN R, COMMUNICATION
[3] JOYCE BA, COMMUNICATION
[4] SI-BEAM RADIATION CLEANING IN MOLECULAR-BEAM EPITAXY
KUGIMIYA, K
HIROFUJI, Y
MATSUO, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 564 - 567
[5] LEONG WY, 1985, SILICON MOL BEAM EPI, V85, P140
[6] OSTROM RM, 1986, APPL PHYS LETT, V48, P22
[7] THE CHARACTERIZATION OF INDIUM DESORBED SI SURFACES FOR LOW-TEMPERATURE SURFACE CLEANING IN SI MOLECULAR-BEAM EPITAXY
YANG, HT
MOONEY, PM
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 1854 - 1859
[8] 1985, SILICON MOL BEAM EPI, V85