THE CHARACTERIZATION OF INDIUM DESORBED SI SURFACES FOR LOW-TEMPERATURE SURFACE CLEANING IN SI MOLECULAR-BEAM EPITAXY

被引：17

作者：

YANG, HT

MOONEY, PM

机构：

[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 05期

关键词：

D O I：

10.1063/1.336014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1854 / 1859

页数：6

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