DEEP LEVEL TRANSIENT SPECTROSCOPY STUDIES OF TRAPPING PARAMETERS FOR CENTERS IN INDIUM-DOPED SILICON

被引：18

作者：

JONES, CE ^{[1
]}

JOHNSON, GE ^{[1
]}

机构：

[1] HONEYWELL INC,CTR CORP TECHNOL,BLOOMINGTON,MN 55420

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.329416

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5159 / 5163

页数：5

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