NEW ACCEPTOR LEVEL IN INDIUM-DOPED SILICON

被引：63

作者：

BARON, R ^{[1
]}

YOUNG, MH ^{[1
]}

NEELAND, JK ^{[1
]}

MARSH, OJ ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 11期

关键词：

D O I：

10.1063/1.89249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：594 / 596

页数：3

共 12 条

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[9] PHOTO-IONIZATION CROSS-SECTION OF INDIUM ACCEPTORS IN SILICON [J].

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