PHOTO-IONIZATION CROSS-SECTION OF INDIUM ACCEPTORS IN SILICON

[1] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) : 2087 - &

[2] APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1969, 185 (03): : 1116 - &

[3] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 65 - 74

[4] DEXTER DL, 1958, SOLID STATE PHYS, V6, P353

[5] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[6] OPTICAL PROPERTIES OF INDIUM-DOPED SILICON [J]. PHYSICAL REVIEW, 1955, 99 (02): : 465 - 467

[7] SPECTROSCOPIC INVESTIGATION OF GROUP-3 ACCEPTOR STATES IN SILICON [J]. PHYSICAL REVIEW, 1967, 163 (03): : 686 - &

[8] [No title captured]

[1] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) : 2087 - &

[2] APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1969, 185 (03): : 1116 - &

[3] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 65 - 74

[4] DEXTER DL, 1958, SOLID STATE PHYS, V6, P353

[5] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[6] OPTICAL PROPERTIES OF INDIUM-DOPED SILICON [J]. PHYSICAL REVIEW, 1955, 99 (02): : 465 - 467

[7] SPECTROSCOPIC INVESTIGATION OF GROUP-3 ACCEPTOR STATES IN SILICON [J]. PHYSICAL REVIEW, 1967, 163 (03): : 686 - &

[8] [No title captured]