REDUCTION OF OXIDES ON SILICON BY HEATING IN A GALLIUM MOLECULAR-BEAM AT 800-DEGREES-C

[1] CONTAMINANTS ON CHEMICALLY ETCHED SILICON SURFACES - LEED-AUGER METHOD [J]. SURFACE SCIENCE, 1970, 23 (02) : 283 - &

[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] REACTIONS OF GALLIUM WITH QUARTZ AND WITH WATER VAPOR, WITH IMPLICATIONS IN THE SYNTHESIS OF GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) : 149 - 154

[4] VAPOR PRESSURE OF GALLIUM, STABILITY OF GALLIUM SUBOXIDE VAPOR, AND EQUILIBRIA OF SOME REACTIONS PRODUCING GALLIUM SUBOXIDE VAPOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) : 144 - 148

[5] AUGER ANALYSIS OF SIO2-SI INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3028 - 3037

[6] INVESTIGATION OF SILICON-OXYGEN INTERACTIONS USING AUGER ELECTRON SPECTROSCOPY [J]. SURFACE SCIENCE, 1971, 27 (03) : 499 - &

[7] KERN W, 1970, RCA REV, V31, P207

[8] KERN W, 1970, RCA REV, V31, P234

[9] SI-MBE - GROWTH AND SB DOPING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 985 - 989

[10] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 2089 - &

[1] CONTAMINANTS ON CHEMICALLY ETCHED SILICON SURFACES - LEED-AUGER METHOD [J]. SURFACE SCIENCE, 1970, 23 (02) : 283 - &

[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] REACTIONS OF GALLIUM WITH QUARTZ AND WITH WATER VAPOR, WITH IMPLICATIONS IN THE SYNTHESIS OF GALLIUM ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) : 149 - 154

[4] VAPOR PRESSURE OF GALLIUM, STABILITY OF GALLIUM SUBOXIDE VAPOR, AND EQUILIBRIA OF SOME REACTIONS PRODUCING GALLIUM SUBOXIDE VAPOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) : 144 - 148

[5] AUGER ANALYSIS OF SIO2-SI INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3028 - 3037

[6] INVESTIGATION OF SILICON-OXYGEN INTERACTIONS USING AUGER ELECTRON SPECTROSCOPY [J]. SURFACE SCIENCE, 1971, 27 (03) : 499 - &

[7] KERN W, 1970, RCA REV, V31, P207

[8] KERN W, 1970, RCA REV, V31, P234

[9] SI-MBE - GROWTH AND SB DOPING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 985 - 989

[10] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 2089 - &