SILICON MOLECULAR-BEAM EPITAXY WITH SIMULTANEOUS ION IMPLANT DOPING

[1] BEAN JC, UNPUBLISHED

[2] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[3] DELEOK AJR, 1977, J APPL PHYS, V48, P301

[4] GOODWIN CA, 1979, IEEE T ELECTRON DEVI, V26

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[6] NAGANUMA M, 1975, APPL PHYS LETT, V27

[7] NORMAL-TYPE DOPING TECHNIQUES IN SILICON MOLECULAR-BEAM EPITAXY BY SIMULTANEOUS ARSENIC ION-IMPLANTATION AND BY ANTIMONY EVAPORATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) : 1761 - 1765

[8] OTA Y, 1977, TECH DIG INT ELECTRO, P375

[9] OTA Y, 1977, J ELECTROCHEM SOC, V124, P1995

[10] ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30

[1] BEAN JC, UNPUBLISHED

[2] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[3] DELEOK AJR, 1977, J APPL PHYS, V48, P301

[4] GOODWIN CA, 1979, IEEE T ELECTRON DEVI, V26

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[6] NAGANUMA M, 1975, APPL PHYS LETT, V27

[7] NORMAL-TYPE DOPING TECHNIQUES IN SILICON MOLECULAR-BEAM EPITAXY BY SIMULTANEOUS ARSENIC ION-IMPLANTATION AND BY ANTIMONY EVAPORATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) : 1761 - 1765

[8] OTA Y, 1977, TECH DIG INT ELECTRO, P375

[9] OTA Y, 1977, J ELECTROCHEM SOC, V124, P1995

[10] ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30