NORMAL-TYPE DOPING TECHNIQUES IN SILICON MOLECULAR-BEAM EPITAXY BY SIMULTANEOUS ARSENIC ION-IMPLANTATION AND BY ANTIMONY EVAPORATION

High quality silicon molecular beam epitaxial films (Si MBE) were successfully grown in an ultrahigh vacuum system with an arsenic ion (As+) source or an antimony effusion source. For As+ ions at 600 eV, the sticking coefficient was =0.75 at growth temperatures ranging from 750° to 950°C, while that of evaporated antimony strongly depended on the growth temperature. Excellent arsenic doping control from 1014 to high 1018 cm-3 was obtained. Good antimony doping control was realized from 1014 to high 1017 cm-3 for growth temperatures ranging from 1050° to 500°C, respectively. By these techniques, various types of doping profiles in the epitaxial film were obtained. © 1979, The Electrochemical Society, Inc. All rights reserved.