IONIZED ZN DOPING OF GAAS MOLECULAR-BEAM EPITAXIAL-FILMS

被引：43

作者：

NAGANUMA, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,2-12-1 OOKAYAMA,MEGURO,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 06期

关键词：

D O I：

10.1063/1.88469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：342 / 344

页数：3

共 12 条

[1] ADSORPTION OF ZN ON GAAS [J].

ARTHUR, JR .

SURFACE SCIENCE, 1973, 38 (02) :394-412

[2] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHANG, LL ;

ESAKI, L ;

HOWARD, WE ;

LUDEKE, R ;

SCHUL, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05) :655-662

[3] GAAS IMPATT DIODES PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

DUNN, CN ;

KUVAS, RL ;

SCHROEDER, WE .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :224-226

[4] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[5] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :288-290

[6] EPITAXY BY PERIODIC ANNEALING [J].

CHO, AY .

SURFACE SCIENCE, 1969, 17 (02) :494-&

[7] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5118-5123

[8] INTERFACE AND DOPING PROFILE CHARACTERISTICS WITH MOLECULAR-BEAM EPITAXY OF GAAS - GAAS VOLTAGE VARACTOR [J].

CHO, AY ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1812-1817

[9] GAAS FET PREPARED WITH MOLECULAR-BEAM EPITAXIAL-FILMS [J].

NAGANUMA, M ;

KAMIMURA, K ;

TAKAHASHI, K ;

SAKAI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (04) :581-582

[10]

Pauling L., 1960, NATURE CHEM BOND, V3rd, P64

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