THE EFFECT OF SURFACE-TREATMENT ON THE ELECTRICAL-PROPERTIES OF METAL CONTACTS TO BORON-DOPED HOMOEPITAXIAL DIAMOND FILM

被引：187

作者：

GROT, SA

GILDENBLAT, GS

HATFIELD, CW

WRONSKI, CR

BADZIAN, AR

BADZIAN, T

MESSIER, R

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802

[2] PENN STATE UNIV,CTR ELECTR MAT & PROC,DEPT ELECT ENGN,MAT RES LAB,UNIVERSITY PK,PA 16802

[3] PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 02期

关键词：

D O I：

10.1109/55.46942

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (CVD). The conductivity of the diamond film is strongly affected by the surface treatment. In particular, exposure of film surface to a hydrogen plasma results in the formation of a conductive layer which can be used to obtain linear (“ohmic”) I-V characteristics of the Au/diamond contacts, regardless of the doping level. The proper chemical cleaning of the boron-doped homoepitaxial diamond surface allows the fabrication of Au-gate Schottky diodes with excellent rectifying characteristics at temperatures of at least 400µC. © 1990 IEEE

引用

页码：100 / 102

页数：3

共 10 条

[1]

BAZHENOV VK, 1985, SOV PHYS SEMICOND+, V19, P829

[2]

COHEN SS, 1986, VLSI ELECTRONICS MIC, V13

[3] HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND [J].