THE BARRIER HEIGHT OF SCHOTTKY DIODES WITH A CHEMICAL-VAPOR-DEPOSITED DIAMOND BASE

被引：68

作者：

HICKS, MC ^{[1
]}

WRONSKI, CR ^{[1
]}

GROT, SA ^{[1
]}

GILDENBLAT, GS ^{[1
]}

BADZIAN, AR ^{[1
]}

BADZIAN, T ^{[1
]}

MESSIER, R ^{[1
]}

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.342864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2139 / 2141

页数：3

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共 16 条

[1] BADZIAN A, 1986, SPIE C P, V683, P127
[2] CRYSTALLIZATION OF DIAMOND CRYSTALS AND FILMS BY MICROWAVE ASSISTED CVD .2.
BADZIAN, AR
BADZIAN, T
ROY, R
MESSIER, R
SPEAR, KE
[J]. MATERIALS RESEARCH BULLETIN, 1988, 23 (04) : 531 - 548
[3] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[4] Cohen SS, 1986, METAL SEMICONDUCTOR, V1st
[5] The analysis of photoelectric sensitivity curves for clean metals at various temperatures
Fowler, RH
[J]. PHYSICAL REVIEW, 1931, 38 (01): : 45 - 56
[6] CHARACTERIZATION OF CONDUCTING DIAMOND FILMS
FUJIMORI, N
IMAI, T
DOI, A
[J]. VACUUM, 1986, 36 (1-3) : 99 - 102
[7] ELECTRICAL CHARACTERISTICS OF SCHOTTKY DIODES FABRICATED USING PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS
GILDENBLAT, GS
GROT, SA
WRONSKI, CR
BADZIAN, AR
BADZIAN, T
MESSIER, R
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (07) : 586 - 588
[8] C-V CHARACTERISTICS OF SCHOTTKY BARRIERS ON LABORATORY GROWN SEMICONDUCTING DIAMONDS
GLOVER, GH
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (09) : 973 - +
[9] SCHOTTKY BARRIERS ON DIAMOND (111)
HIMPSEL, FJ
HEIMANN, P
EASTMAN, DE
[J]. SOLID STATE COMMUNICATIONS, 1980, 36 (07) : 631 - 633
[10] MATSUMOTO S, 1982, JPN J APPL PHYS, V21, P1183