THE BARRIER HEIGHT OF SCHOTTKY DIODES WITH A CHEMICAL-VAPOR-DEPOSITED DIAMOND BASE

被引：68

作者：

HICKS, MC ^{[1
]}

WRONSKI, CR ^{[1
]}

GROT, SA ^{[1
]}

GILDENBLAT, GS ^{[1
]}

BADZIAN, AR ^{[1
]}

BADZIAN, T ^{[1
]}

MESSIER, R ^{[1
]}

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.342864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2139 / 2141

页数：3

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