SCHOTTKY-BARRIER HEIGHTS ON P-TYPE DIAMOND AND SILICON-CARBIDE (6H)

被引：51

作者：

MEAD, CA ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

PHYSICS LETTERS A | 1976年 / 58卷 / 04期

关键词：

D O I：

10.1016/0375-9601(76)90088-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：249 / 251

页数：3

相关论文

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