C-V CHARACTERISTICS OF SCHOTTKY BARRIERS ON LABORATORY GROWN SEMICONDUCTING DIAMONDS

被引：100

作者：

GLOVER, GH ^{[1
]}

机构：

[1] GE, RES & DEV CTR, SCHENECTADY, NY 12301 USA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 09期

关键词：

D O I：

10.1016/0038-1101(73)90196-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：973 / +

页数：1

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