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DEEP LEVEL IMPURITY EFFECTS ON FREQUENCY-DEPENDENCE OF SCHOTTKY-BARRIER CAPACITANCE
被引:39
作者
:
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
NAKANO, K
论文数:
0
引用数:
0
h-index:
0
NAKANO, K
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1972年
/ 15卷
/ 06期
关键词
:
D O I
:
10.1016/0038-1101(72)90002-0
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:605 / +
页数:1
相关论文
共 6 条
[1]
RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
BEGUWALA, M
论文数:
0
引用数:
0
h-index:
0
BEGUWALA, M
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(11)
: 1149
-
&
[2]
ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT
FOYT, AG
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory Operated with support from the U.S. Air Force., Massachusetts Institute of Technology, Lexington
FOYT, AG
LINDLEY, WT
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory Operated with support from the U.S. Air Force., Massachusetts Institute of Technology, Lexington
LINDLEY, WT
WOLFE, CM
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory Operated with support from the U.S. Air Force., Massachusetts Institute of Technology, Lexington
WOLFE, CM
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory Operated with support from the U.S. Air Force., Massachusetts Institute of Technology, Lexington
DONNELLY, JP
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(04)
: 209
-
&
[3]
PEREL VI, 1968, SOV PHYS SEMICOND+, V1, P1403
[4]
CAPACITANCE ENERGY LEVEL SPECTROSCOPY OF DEEP-LYING SEMICONDUCTOR IMPURITIES USING SCHOTTKY BARRIERS
ROBERTS, GI
论文数:
0
引用数:
0
h-index:
0
ROBERTS, GI
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(04)
: 1767
-
+
[5]
FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
REDDI, VGK
论文数:
0
引用数:
0
h-index:
0
REDDI, VGK
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(07)
: 345
-
+
[6]
EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE
SCHIBLI, E
论文数:
0
引用数:
0
h-index:
0
SCHIBLI, E
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(03)
: 323
-
+
←
1
→
共 6 条
[1]
RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
BEGUWALA, M
论文数:
0
引用数:
0
h-index:
0
BEGUWALA, M
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(11)
: 1149
-
&
[2]
ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT
FOYT, AG
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory Operated with support from the U.S. Air Force., Massachusetts Institute of Technology, Lexington
FOYT, AG
LINDLEY, WT
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory Operated with support from the U.S. Air Force., Massachusetts Institute of Technology, Lexington
LINDLEY, WT
WOLFE, CM
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory Operated with support from the U.S. Air Force., Massachusetts Institute of Technology, Lexington
WOLFE, CM
DONNELLY, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Lincoln Laboratory Operated with support from the U.S. Air Force., Massachusetts Institute of Technology, Lexington
DONNELLY, JP
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(04)
: 209
-
&
[3]
PEREL VI, 1968, SOV PHYS SEMICOND+, V1, P1403
[4]
CAPACITANCE ENERGY LEVEL SPECTROSCOPY OF DEEP-LYING SEMICONDUCTOR IMPURITIES USING SCHOTTKY BARRIERS
ROBERTS, GI
论文数:
0
引用数:
0
h-index:
0
ROBERTS, GI
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(04)
: 1767
-
+
[5]
FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
REDDI, VGK
论文数:
0
引用数:
0
h-index:
0
REDDI, VGK
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(07)
: 345
-
+
[6]
EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE
SCHIBLI, E
论文数:
0
引用数:
0
h-index:
0
SCHIBLI, E
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(03)
: 323
-
+
←
1
→