FREQUENCY-DEPENDENCE OF GAAS SCHOTTKY-BARRIER CAPACITANCES

[1] A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) : 445 - &

[2] METHOD FOR MEASURING IMPURITY DISTRIBUTIONS IN SEMICONDUCTOR CRYSTALS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1631 - +

[3] PEREL VI, 1968, SOV PHYS SEMICOND+, V1, P1403

[4] CAPACITANCE ENERGY LEVEL SPECTROSCOPY OF DEEP-LYING SEMICONDUCTOR IMPURITIES USING SCHOTTKY BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1767 - +

[5] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 345 - +

[6] EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE [J]. SOLID-STATE ELECTRONICS, 1968, 11 (03) : 323 - +

[7] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592

[8] THEORETICAL EXPRESSION FOR IMPEDANCE OF REVERSE-BIASED P-N JUNCTIONS WITH DEEP TRAPS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (03) : 227 - +

[9] CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4581 - +

[10] A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 284 - &

[1] A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) : 445 - &

[2] METHOD FOR MEASURING IMPURITY DISTRIBUTIONS IN SEMICONDUCTOR CRYSTALS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1631 - +

[3] PEREL VI, 1968, SOV PHYS SEMICOND+, V1, P1403

[4] CAPACITANCE ENERGY LEVEL SPECTROSCOPY OF DEEP-LYING SEMICONDUCTOR IMPURITIES USING SCHOTTKY BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1767 - +

[5] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 345 - +

[6] EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE [J]. SOLID-STATE ELECTRONICS, 1968, 11 (03) : 323 - +

[7] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592

[8] THEORETICAL EXPRESSION FOR IMPEDANCE OF REVERSE-BIASED P-N JUNCTIONS WITH DEEP TRAPS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (03) : 227 - +

[9] CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4581 - +

[10] A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 284 - &