THEORETICAL EXPRESSION FOR IMPEDANCE OF REVERSE-BIASED P-N JUNCTIONS WITH DEEP TRAPS

被引：14

作者：

SCHULTZ, W

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 03期

关键词：

D O I：

10.1016/0038-1101(71)90036-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：227 / +

页数：1

相关论文

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