COMPUTER SIMULATION OF A GOLD DOPED DIODE

[1] PROPERTIES OF GOLD IN SILICON [J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 143 - &

[2] CAUGHEY DM, 1967 IEEE INT EL C T

[3] SAH CT, 1967, PR INST ELECTR ELECT, V55, P672

[4] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 345 - +

[1] PROPERTIES OF GOLD IN SILICON [J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 143 - &

[2] CAUGHEY DM, 1967 IEEE INT EL C T

[3] SAH CT, 1967, PR INST ELECTR ELECT, V55, P672

[4] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 345 - +