ON REVERSE-BIASED CAPACITANCE OF STEP P+-N JUNCTIONS WITH TRAPS

[1] RECOMBINATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 990 - 1004

[2] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[3] PEREL VI, 1967, FIZ TEKH POLUPROV, V1, P1693

[4] ELECTRON-HOLE RECOMBINATION STATISTICS IN SEMICONDUCTORS THROUGH FLAWS WITH MANY CHARGE CONDITIONS [J]. PHYSICAL REVIEW, 1958, 109 (04): : 1103 - 1115

[5] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 345 - +

[6] STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR [J]. PHYSICAL REVIEW, 1957, 107 (02): : 392 - 396

[7] ZHDANOVA NG, 1959, FIZ TVERD TELA, V1, P535

[1] RECOMBINATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 990 - 1004

[2] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[3] PEREL VI, 1967, FIZ TEKH POLUPROV, V1, P1693

[4] ELECTRON-HOLE RECOMBINATION STATISTICS IN SEMICONDUCTORS THROUGH FLAWS WITH MANY CHARGE CONDITIONS [J]. PHYSICAL REVIEW, 1958, 109 (04): : 1103 - 1115

[5] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 345 - +

[6] STATISTICS OF THE CHARGE DISTRIBUTION FOR A LOCALIZED FLAW IN A SEMICONDUCTOR [J]. PHYSICAL REVIEW, 1957, 107 (02): : 392 - 396

[7] ZHDANOVA NG, 1959, FIZ TVERD TELA, V1, P535