ACCURATE CAPACITANCE CALCULATIONS FOR PN JUNCTIONS CONTAINING TRAPS

被引：17

作者：

EERNISSE, EP

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 05期

关键词：

D O I：

10.1063/1.1653617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：183 / +

页数：1

共 18 条

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[2]

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[8] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[9] CHARGE-CARRIER CAPTURE AND ITS EFFECT ON TRANSITION CAPACITANCE IN GAP-CU DIODES [J].

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[10] DEPLETION-LAYER CAPACITANCE OF P+N STEP JUNCTIONS [J].

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