ELECTRICAL CHARACTERISTICS OF METAL CONTACTS TO BORON-DOPED DIAMOND EPITAXIAL FILM

被引：102

作者：

SHIOMI, H

NAKAHATA, H

IMAI, T

NISHIBAYASHI, Y

FUJIMORI, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 05期

关键词：

D O I：

10.1143/JJAP.28.758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：758 / 762

页数：5

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共 13 条

[1] BAZHENOV VK, 1985, SOV PHYS SEMICOND+, V19, P829
[2] BOGDANOV AV, 1982, SOV PHYS SEMICOND+, V16, P720
[3] PHOTOTHERMAL IONIZATION AND PHOTON-INDUCED TUNNELING IN ACCEPTOR PHOTOCONDUCTIVITY SPECTRUM OF SEMICONDUCTING DIAMOND
COLLINS, AT
LIGHTOWLERS, EC
[J]. PHYSICAL REVIEW, 1968, 171 (03): : 843 - +
[4] CHARACTERIZATION OF CONDUCTING DIAMOND FILMS
FUJIMORI, N
IMAI, T
DOI, A
[J]. VACUUM, 1986, 36 (1-3) : 99 - 102
[5] HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND
GEIS, MW
RATHMAN, DD
EHRLICH, DJ
MURPHY, RA
LINDLEY, WT
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) : 341 - 343
[6] ELECTRICAL CHARACTERISTICS OF SCHOTTKY DIODES FABRICATED USING PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS
GILDENBLAT, GS
GROT, SA
WRONSKI, CR
BADZIAN, AR
BADZIAN, T
MESSIER, R
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (07) : 586 - 588
[7] KONOROVA EA, 1983, SOV PHYS SEMICOND+, V17, P146
[8] NARITA K, 1969, B JAPAN I METALS, V8, P49
[9] LATTICE SCATTERING AND EFFECTIVE MASS OF HOLES IN NATURAL DIAMOND
REGGIANI, L
BOSI, S
CANALI, C
NAVA, F
[J]. SOLID STATE COMMUNICATIONS, 1979, 30 (06) : 333 - 335
[10] SEMICONDUCTING DIAMONDS AS THERMISTORS
RODGERS, GB
RAAL, FA
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1960, 31 (06) : 663 - 664