HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND

[1] BAZHENOV VK, 1985, SOV PHYS SEMICOND+, V19, P829

[2] BOGDANOV AV, 1982, SOV PHYS SEMICOND+, V16, P720

[3] Campbell R. B., 1969, MAT RES B, V4, pS211

[4] Deryagin B.V., 1970, RUSS CHEM REV+, V39, P783, DOI DOI 10.1070/RC1970V039N09ABEH002022

[5] DEVRIES RC, 1981, 81CRD110 GEN EL REP

[6] ION-BEAM-ASSISTED ETCHING OF DIAMOND [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 416 - 418

[7] FIELD JE, 1979, PROPERTIES DIAMONDS, P15

[8] FIELD JE, 1979, PROPERTIES DIAMOND, P403

[9] C-V CHARACTERISTICS OF SCHOTTKY BARRIERS ON LABORATORY GROWN SEMICONDUCTING DIAMONDS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (09) : 973 - +

[10] DIAMOND SYNTHESIS FROM GAS-PHASE IN MICROWAVE PLASMA [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) : 642 - 644

[1] BAZHENOV VK, 1985, SOV PHYS SEMICOND+, V19, P829

[2] BOGDANOV AV, 1982, SOV PHYS SEMICOND+, V16, P720

[3] Campbell R. B., 1969, MAT RES B, V4, pS211

[4] Deryagin B.V., 1970, RUSS CHEM REV+, V39, P783, DOI DOI 10.1070/RC1970V039N09ABEH002022

[5] DEVRIES RC, 1981, 81CRD110 GEN EL REP

[6] ION-BEAM-ASSISTED ETCHING OF DIAMOND [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 416 - 418

[7] FIELD JE, 1979, PROPERTIES DIAMONDS, P15

[8] FIELD JE, 1979, PROPERTIES DIAMOND, P403

[9] C-V CHARACTERISTICS OF SCHOTTKY BARRIERS ON LABORATORY GROWN SEMICONDUCTING DIAMONDS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (09) : 973 - +

[10] DIAMOND SYNTHESIS FROM GAS-PHASE IN MICROWAVE PLASMA [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) : 642 - 644