EXCITONS IN SPATIALLY SEPARATED V-SHAPED QUANTUM-WELLS - APPLICATION TO GAAS SAWTOOTH-DOPING SUPERLATTICES

被引:6
作者
PROETTO, CR
机构
[1] Centro Atamico Bariloche, Río Negro
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 09期
关键词
D O I
10.1103/PhysRevB.41.6036
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A variational calculation of the ground state of an exciton in spatially separated ssV-shaped quantum wells is presented. This is connected to the properties of excitons in sawtooth-doped superlattices. The binding energy, lateral extension, and vertical extension are calculated as functions of the superlattice period and doping impurity concentration. In spite of the fact that electrons and holes are present in spatially separated regions, the binding energies are of magnitude similar to those found in compositional GaAs quantum wells. © 1990 The American Physical Society.
引用
收藏
页码:6036 / 6039
页数:4
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