A BIRDS-EYE-VIEW ON THE EVOLUTION OF SEMICONDUCTOR SUPERLATTICES AND QUANTUM-WELLS

被引：386

作者：

ESAKI, L

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 09期

关键词：

D O I：

10.1109/JQE.1986.1073162

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1611 / 1624

页数：14

相关论文

共 204 条

[1] AMORPHOUS-SEMICONDUCTOR SUPER-LATTICES
ABELES, B
TIEDJE, T
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (21) : 2003 - 2006
[2] INELASTIC LIGHT-SCATTERING FROM A QUASI-2-DIMENSIONAL ELECTRON-SYSTEM IN GAAS-ALXGA1-XAS HETEROJUNCTIONS
ABSTREITER, G
PLOOG, K
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (19) : 1308 - 1311
[3] MEASUREMENTS OF ELECTRIC-FIELD-INDUCED ENERGY-LEVEL SHIFTS IN GAAS SINGLE-QUANTUM-WELLS USING ELECTROREFLECTANCE
ALIBERT, C
GAILLARD, S
BRUM, JA
BASTARD, G
FRIJLINK, P
ERMAN, M
[J]. SOLID STATE COMMUNICATIONS, 1985, 53 (05) : 457 - 460
[4] ELECTRONIC-STRUCTURE AND SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES
ALTARELLI, M
[J]. PHYSICAL REVIEW B, 1983, 28 (02) : 842 - 845
[5] THEORY OF QUANTUM TRANSPORT IN A 2-DIMENSIONAL ELECTRON-SYSTEM UNDER MAGNETIC-FIELDS .1. CHARACTERISTICS OF LEVEL BROADENING AND TRANSPORT UNDER STRONG FIELDS
ANDO, T
UEMURA, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 36 (04) : 959 - 967
[6] ELECTRONIC-STRUCTURE OF AN ISOLATED GAAS-GAALAS QUANTUM WELL IN A STRONG ELECTRIC-FIELD
AUSTIN, EJ
JAROS, M
[J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5569 - 5572
[7] VARIATIONAL CALCULATIONS ON A QUANTUM WELL IN AN ELECTRIC-FIELD
BASTARD, G
MENDEZ, EE
CHANG, LL
ESAKI, L
[J]. PHYSICAL REVIEW B, 1983, 28 (06): : 3241 - 3245
[8] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION
BASTARD, G
[J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5693 - 5697
[9] THEORETICAL INVESTIGATIONS OF SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION
BASTARD, G
[J]. PHYSICAL REVIEW B, 1982, 25 (12) : 7584 - 7597
[10] SELF-CONSISTENT CALCULATIONS IN INAS-GASB HETEROJUNCTIONS
BASTARD, G
MENDEZ, EE
CHANG, LL
ESAKI, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 531 - 533

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