GOOD-QUALITY GE FILMS GROWN BY EXCIMER LASER DEPOSITION

Laser evaporation of solid Ge targets is used to grow Ge films onto glass and carbon-coated substrates. Rotation of the target yields the formation of good-quality amorphous films at 0.3-0.6 nm s-1 rates. Comparison of their Raman spectra to those of films grown by sputtering shows no significant differences. The spatial distribution of the deposited material is studied by means of optical microdensitometry. It is found to depend on the experimental geometry and different cosnθ laws (θ is the angle from the target normal) are found to fit the experimental results. © 1990.