ELECTROOPTIC MODULATION IN POLAR GROWTH AXIS INGAAS/GAAS MULTIPLE QUANTUM-WELLS

被引：16

作者：

CAMPBELL, IH ^{[1
]}

WATKINS, DE ^{[1
]}

SMITH, DL ^{[1
]}

SUBBANNA, S ^{[1
]}

KROEMER, H ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,ECE,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 14期

关键词：

D O I：

10.1063/1.106226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present electrooptic modulation results on [100], [211]A and [211]B oriented InGaAs/GaAs multiple quantum wells. Internal electric fields are generated by a combination of strain, due to lattice mismatch, and the piezoelectric properties of III-V semiconductors in the [211] structures. These fields have opposite orientation in the [211]A and [211]B samples. They do not occur in the [100] samples. The total electric field is a superposition of the strain-generated field, the built-in field from the p-n junction and any externally applied field. We show that whereas in the conventional [100] structures the exciton energy is a quadratic function of applied field, the strain-generated fields cause a linear shift in the exciton resonance with applied field in the [211] structures. In addition, the direction of the excitonic shift is opposite in the [211]A and [211]B samples, because the sign of the strain-generated fields are opposite for these samples.

引用

页码：1711 / 1713

页数：3

共 11 条

[1] DIRECT DEMONSTRATION OF A MISFIT STRAIN-GENERATED ELECTRIC-FIELD IN A [111] GROWTH AXIS ZINCBLENDE HETEROSTRUCTURE [J].