DIRECT DEMONSTRATION OF A MISFIT STRAIN-GENERATED ELECTRIC-FIELD IN A [111] GROWTH AXIS ZINCBLENDE HETEROSTRUCTURE

被引：203

作者：

CARIDI, EA ^{[1
]}

CHANG, TY ^{[1
]}

GOOSSEN, KW ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 07期

关键词：

D O I：

10.1063/1.102729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first direct demonstration of a strain-generated built-in electric field in a (111) oriented strained-layer heterostructure. We present a model which describes the accommodation of the misfit strain in a lattice-mismatched quantum well, and the resulting generation of a longitudinal electric field via the piezoelectric effect. On a (111)B GaAs substrate, we grew the quantum well in the intrinsic region of a p-i-n diode such that the strain-generated electric field in the quantum well opposes the weaker built-in electric field of the diode. Under reverse bias operation, photoconductivity measurements show a quadratic blue shift of the quantum well electroabsorption peaks, in contrast to the red shifts normally observed in the quantum-confined Stark effect. The measured blue shifts demonstrate an electric field strength of 1.7×105 V/cm, which agrees with theory to within the accuracy of the measured sample characteristics.

引用

页码：659 / 661

页数：3

共 15 条

[1]

CADY WG, 1946, PIEZOELECTRICITY

[2] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES [J].