SOLAR-CELL CHARACTERISTICS AND INTERFACIAL CHEMISTRY OF INDIUM-TIN-OXIDE-INDIUM PHOSPHIDE AND INDIUM-TIN-OXIDE-GALLIUM ARSENIDE JUNCTIONS

被引:58
作者
BACHMANN, KJ
SCHREIBER, H
SINCLAIR, WR
SCHMIDT, PH
THIEL, FA
SPENCER, EG
PASTEUR, G
FELDMANN, WL
SREEHARSHA, K
机构
[1] Bell Laboratories, Murray Hill
关键词
D O I
10.1063/1.326337
中图分类号
O59 [应用物理学];
学科分类号
摘要
The preparation of indium-tin-oxide (ITO)/p-InP and ITO/p-GaAs solar cells via ion-beam deposition, rf sputtering, and magnetron sputtering of ITO onto single-crystal InP and GaAs substrates is described. The properties of these solar cells are strongly affected by the fabrication conditions and are related to chemical modifications of the junctions. The solar power conversion efficiencies at air mass 2 of ITO/p-GaAs and ITO/p-InP solar cells are ≤5 and ≤14.4%, respectively.
引用
收藏
页码:3441 / 3446
页数:6
相关论文
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