EFFECT OF O2 PRESSURE DURING DEPOSITION ON PROPERTIES OF RF-SPUTTERED SN-DOPED IN2O3 FILMS

被引：130

作者：

FAN, JCC ^{[1
]}

BACHNER, FJ ^{[1
]}

FOLEY, GH ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 11期

关键词：

D O I：

10.1063/1.89544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：773 / 775

页数：3

共 13 条

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[7] HIGHLY CONDUCTIVE, TRANSPARENT FILMS OF SPUTTERED IN2-XSNXO3-Y [J].

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[10]

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