COMPARISON OF SITE-SPECIFIC DENSITIES OF STATES OF GA AND AS IN CLEAVED AND SPUTTERED GAAS(110) BY MEANS OF AUGER LINE-SHAPES

被引：14

作者：

DAVIS, GD

SAVAGE, DE

LAGALLY, MG

机构：

[1] UNIV WISCONSIN, DEPT MET & MAT ENGN, MADISON, WI 53706 USA

[2] UNIV WISCONSIN, CTR MAT SCI, MADISON, WI 53706 USA

来源：

关键词：

D O I：

10.1016/0368-2048(81)85034-7

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

引用

页码：25 / 38

页数：14

共 47 条

[1] INTERFACE STATES AT GA-GAAS INTERFACE
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[2] SURFACE-REACTIONS AND INTERDIFFUSION
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BAUER, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153
[3] BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177
[4] (110) SURFACE-STATES OF GAAS AND MATRIX ELEMENT EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1244 - 1248
[5] OXIDATION OF ORDERED AND DISORDERED GAAS(110)
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1191 - 1194
[6] CLEARFIELD HM, UNPUBLISHED
[7] MEASUREMENT OF VALENCE BAND AUGER-SPECTRA FOR GAAS(110) FROM GA AND AS-CCV TRANSITIONS
DAVIS, GD
LAGALLY, MG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1311 - 1316
[8] COMPARISON OF SITE-SPECIFIC VALENCE BAND DENSITIES OF STATES DETERMINED FROM AUGER-SPECTRA AND XPS-DETERMINED VALENCE BAND SPECTRA IN GES (001) AND GESE (001)
DAVIS, GD
VILJOEN, PE
LAGALLY, MG
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1980, 21 (02) : 135 - 152
[9] DETERMINATION OF SHALLOW CORE LEVEL SPECTRA IN SELECTED COMPOUND SEMICONDUCTORS
DAVIS, GD
VILJOEN, PE
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[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1980, 20 (04) : 305 - 318
[10] DAVIS GD, 1981, J VAC SCI TECHNOL, V18